Infineon IPP028N08N3G: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, Infineon Technologies' IPP028N08N3G stands out as a premier solution, leveraging the advanced OptiMOS 5 80 V technology to set a new benchmark for performance in power conversion applications.

This N-channel power MOSFET is engineered to minimize losses, a critical factor for enhancing overall system efficiency. Its standout feature is an exceptionally low typical on-state resistance (RDS(on)) of just 2.0 mΩ. This ultra-low resistance directly translates to reduced conduction losses, allowing the device to handle high currents with minimal voltage drop and subsequent heat generation. When combined with outstanding switching performance, characterized by low gate and output charges, the device significantly reduces switching losses, which is paramount for high-frequency operation in switch-mode power supplies (SMPS), motor drives, and DC-DC converters.

The benefits of these characteristics are profound. Designers can achieve higher power density by operating at elevated frequencies without sacrificing thermal performance, leading to smaller magnetic components and more compact end products. Furthermore, the improved efficiency reduces the need for extensive cooling solutions, simplifying mechanical design and lowering total system cost. The IPP028N08N3G is housed in a TO-220 package, offering a robust and familiar footprint that ensures ease of mounting and excellent thermal dissipation capabilities.

Target applications are diverse and demanding, including:

Server and Telecom Power Supplies: Where efficiency metrics like 80 Plus Titanium are crucial.

Industrial Motor Drives and Controls: Requiring robust and reliable switching under high loads.

Solar Inverters and Energy Storage Systems: Benefiting from low losses to maximize energy harvest and storage.

Synchronous Rectification: Its fast body diode and low RDS(on) make it ideal for this loss-sensitive function.

ICGOOODFIND

The Infineon IPP028N08N3G exemplifies the progress in power semiconductor technology, providing designers with a potent tool to overcome efficiency and thermal challenges. Its superior blend of ultra-low on-state resistance, fast switching speed, and robust thermal performance makes it an optimal choice for next-generation power conversion systems striving for peak performance and reliability.

Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Conversion, Switching Performance.