Infineon IPA65R110CFD: A 650V CoolMOS™ CFD2 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching transistor is a critical component whose performance directly impacts overall efficacy. The Infineon IPA65R110CFD, a 650V CoolMOS™ CFD2 device, stands out as a premier solution engineered to meet these challenges in high-performance switching applications.

This transistor belongs to Infineon's revolutionary CoolMOS™ CFD2 family, which is renowned for its exceptional combination of low switching losses and high robustness. The "CFD" designation stands for "Fast Switching Diode," a key feature integrated into the MOSFET's structure. This integrated fast body diode is pivotal for applications requiring hard commutation, such as power factor correction (PFC) stages, solar inverters, and server power supplies. It significantly enhances reverse recovery performance, reducing associated losses and electromagnetic interference (EMI), which simplifies filtering requirements.

The IPA65R110CFD boasts a superjunction structure that enables an ultra-low specific on-state resistance (RDS(on)) of just 110 mΩ. This low resistance translates to minimized conduction losses, allowing for higher efficiency operation, especially under high load conditions. The 650V voltage rating provides a comfortable safety margin for operation in universal mains applications (85 – 305 VAC) and ensures high reliability against voltage spikes and transients.

Furthermore, this device exhibits outstanding switching characteristics. The optimized gate charge (Qg) and low capacitances facilitate fast and smooth switching, which is essential for operating at high frequencies. By enabling higher switching frequencies, designers can reduce the size of passive components like magnetics and capacitors, thereby increasing power density and reducing the overall system form factor and cost.

The technological advancements of the CoolMOS™ CFD2 series also contribute to improved system reliability. Features like high avalanche ruggedness and a strong ability to handle high dV/dt rates make it exceptionally robust in demanding environments. Its high peak current capability ensures stable performance during transient load conditions.

ICGOOODFIND: The Infineon IPA65R110CFD is a benchmark 650V superjunction MOSFET that expertly balances ultra-low conduction loss with superior switching performance. Its integrated fast body diode makes it an indispensable component for high-efficiency, high-frequency, and high-reliability power conversion systems, including telecom SMPS, industrial motor drives, and EV charging infrastructure.

Keywords: CoolMOS™ CFD2, Integrated Fast Body Diode, High-Efficiency Switching, Ultra-Low RDS(on), High Power Density