Infineon BSC030N03LSG: High-Efficiency MOSFET for Advanced Power Management Applications

The demand for higher efficiency and greater power density in modern electronic systems continues to drive innovation in semiconductor technology. Addressing this need, the Infineon BSC030N03LSG stands out as an exemplary power MOSFET engineered to deliver superior performance in advanced power management applications. This device combines low on-state resistance with exceptional switching characteristics, making it a preferred choice for designers aiming to optimize energy efficiency and thermal management.

Built on Infineon’s advanced OptiMOS™ technology, the BSC030N03LSG is a N-channel MOSFET with a voltage rating of 30 V and a continuous drain current capability of up to 100 A. Its key strength lies in its extremely low RDS(on) of just 1.7 mΩ, which significantly reduces conduction losses. This feature is critical in high-current applications such as DC-DC converters, motor control systems, and power supplies, where minimizing energy loss directly enhances overall system efficiency.

Another notable advantage of the BSC030N03LSG is its optimized switching performance. The device exhibits low gate charge (Qg) and output capacitance (Coss), enabling faster switching frequencies and reduced switching losses. This makes it particularly suitable for high-frequency switching regulators used in computing, telecommunications, and automotive power systems. The improved thermal performance, supported by a low thermal resistance package, ensures reliable operation even under demanding conditions.

The MOSFET is housed in a SuperSO8 package, which offers an excellent balance between compact size and high current-handling capacity. This package technology not only saves valuable PCB space but also improves heat dissipation, contributing to higher power density designs. Moreover, the BSC030N03LSG is designed with robustness in mind, featuring a high avalanche ruggedness and enhanced body diode characteristics, which increase system reliability.

In applications such as server VRMs (Voltage Regulator Modules), battery management systems, and POL (Point-of-Load) converters, the BSC030N03LSG provides a tangible improvement in efficiency and thermal behavior. Its ability to operate at high frequencies allows for the use of smaller passive components, further reducing the form factor and cost of the end application.

ICGOOODFIND:

The Infineon BSC030N03LSG is a high-performance MOSFET that sets a benchmark in power management solutions. With its ultra-low RDS(on), excellent switching properties, and compact packaging, it is ideal for high-efficiency, high-density power designs across various industries.

Keywords:

Power MOSFET, High Efficiency, Low RDS(on), OptiMOS™, Power Management